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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW50F HF/VHF power transistor
Product specification August 1986
Philips Semiconductors
Product specification
HF/VHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in class-A, AB and B operated, industrial and military transmitters in the h.f. and v.h.f. band. Resistance stabilization provides protection against device damage at severe load mismatch conditions. Matched hFE groups are available on request. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.
BLW50F
QUICK REFERENCE DATA R.F. performance MODE OF OPERATION s.s.b. (class-A) s.s.b. (class-AB) Note 1. At 65W P.E.P. PIN CONFIGURATION
halfpage
VCE V 45 50
f MHz 1,6 - 28 1,6 - 28
PL W 0 - 16 (P.E.P.) >
Gp dB 19,5
dt % - typ. 45(1)
IC A 1,2 1,45
IC(ZS) mA - 50 <
d3 dB -40 typ. -30
Th C 70 25
10 - 65 (P.E.P.) typ. 18
PINNING - SOT123 PIN 1 DESCRIPTION collector emitter base emitter
1
4 c
handbook, halfpage
2 3 4
e
b
MBB012
2
3
MSB057
Fig.1 Simplified outline and symbol.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
HF/VHF power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (average) Collector current (peak value); f > 1 MHz D.C. and r.f. (f > 1 MHz) power dissipation; Tmb = 25 C Storage temperature Operating junction temperature VCESM VCEO VEBO IC(AV) ICM Ptot; Prf Tstg Tj max. max. max. max. max. max. max.
BLW50F
110 V 55 V 4V 2,5 A 7,5 A 94 W 200 C
-65 to + 150 C
MGP466
handbook, halfpage
10
handbook, halfpage
150
MGP467
IC (A)
Prf (W) Tmb = 25 C 100 Th = 70 C
1
50
10-1 1 10 VCE (V) 102
0 0 50 Th (C) 100
I Continuous d.c. and r.f. operation II Short-time operation during mismatch
Fig.2 D.C. SOAR.
Fig.3 Power derating curves vs. temperature.
THERMAL RESISTANCE (dissipation = 54 W; Tmb = 86 C, i.e. Th = 70 C) From junction to mounting base (d.c. and r.f. dissipation) From mounting base to heatsink Rth j-mb Rth mb-h = = 2,1 K/W 0,3 K/W
August 1986
3
Philips Semiconductors
Product specification
HF/VHF power transistor
CHARACTERISTICS Tj = 25 C Collector-emitter breakdown voltage VBE = 0; IC = 25 mA Collector-emitter breakdown voltage open base; IC = 100 mA Emitter-base breakdown voltage open collector; IE = 10 mA Collector cut-off current VBE = 0; VCE = 55 V Second breakdown energy; L = 25 mH; f = 50 Hz open base RBE = 10 D.C. current gain(1) hFE devices(1) hFE1/hFE2 VCEsat MHz(1) fT fT Cc Cre Ccf typ. typ. typ. typ. typ. < typ. ESBO ESBR > > ICES < V(BR)EBO > V(BR) CEO > V(BR) CES >
BLW50F
110 V 55 V 4V 10 mA 8 mJ 8 mJ
IC = 1,2 A; VCE = 5 V D.C. current gain ratio of matched IC = 1,2 A; VCE = 5 V Collector-emitter saturation voltage(1) IC = 3,0 A; IB = 0,6 A Transition frequency at f = 100 -IE = 1,2 A; VCB = 45 V -IE = 4,0 A; VCB = 45 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 45 V Feedback capacitance at f = 1 MHz IC = 50 mA; VCE = 45 V Collector-flange capacitance Note 1. Measured under pulse conditions: tp 200 s; 0,02.
typ. 25 15 to 100 1,2 1,2 V 490 MHz 540 MHz 53 pF 35 pF 2 pF
August 1986
4
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW50F
handbook, halfpage
10
MGP468
handbook, halfpage
40
MGP469
VCE = 45 V
IC (A) typ 1
hFE 30 5V
20 10-1 10
10-2
0
0.5
1
VBE (V)
1.5
0 0 1 2 IC (A) 3
Fig.4 VCE = 40 V; Tmb = 25 C.
Fig.5 Typical values; Tj = 25 C.
handbook, halfpage
600
MGP470
VCB = 45 V 10 V
handbook, halfpage
300
MGP471
fT (MHz) 400
Cc (pF)
200
200
100 typ
0 0 5 -IE (A) 10
0 0 25 VCB (V) 50
Fig.6 Typical values; f = 100 MHz; Tj = 25 C.
Fig.7 IE = Ie = 0; f = 1 MHz; Tj = 25 C.
August 1986
5
Philips Semiconductors
Product specification
HF/VHF power transistor
APPLICATION INFORMATION R.F. performance in s.s.b. class-A operation (linear power amplifier) VCE = 45 V; f1 = 28,000 MHz; f2 = 28,001 MHz OUTPUT POWER W > 16 (P.E.P.) > typ. typ. 17 (P.E.P.) Gp dB 19,5 20,5 IC A 1,2 1,2 d3(1) dB -40 -40 d5(1) dB < -40 < -40 Th C 70 70
BLW50F
handbook, full pagewidth
L4 C1 50 L1 C2 +VBB C3 C4 R1 R2 T.U.T. L3 L2 C6 C5 C7 R3 +VCC
C9 50 C8
MGP472
Fig.8 Test circuit; s.s.b. class-A.
List of components in Fig.8: C1 C3 C4 C5 C6 C8 C9 L1 L2 L3 L4 R1 R2 R3 Note 1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB. = = = = = = = = = = = = = = C2 = 10 to 780 pF film dielectric trimmer 22 nF ceramic capacitor (63 V) 4,7 F/16 V electrolytic capacitor 1 F/75 V solid tantalum capacitor C7 = 47 nF polyester capacitor (100 V) 68 pF ceramic capacitor (500 V) 3,9 nF ceramic capacitor 3 turns closely wound enamelled Cu wire (1,0 mm); int. dia 9,0 mm; leads 2 x 5 mm Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) 1,05 H; 15 turns enamelled Cu wire (1,0 mm); int. dia. 10 mm; length 17,4 mm; leads 2 x 5 mm 162 nH; 6 turns enamelled Cu wire (1,0 mm); int. dia. 7,0 mm; length 11,6 mm; leads 2 x 5 mm 1,6 ; parallel connection of 3 x 4,7 carbon resistors ( 5%; 0,125 W) 47 carbon resistor ( 5%; 0,25 W) 4,7 carbon resistor ( 5%; 0,25 W)
August 1986
6
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW50F
handbook, full pagewidth
-20
MGP473
d3 (dB) -30 IC = 0.8 A 1.0 A 1.2 A
-40
-50
-60
0
10
20
P.E.P. (W)
30
Fig.9
Intermodulation distortion (see note on previous page) as a function of output power. Typical values; VCE = 45 V; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 70 C.
August 1986
7
Philips Semiconductors
Product specification
HF/VHF power transistor
R.F. performance in s.s.b. class-AB operation (linear power amplifier) VCE = 50 V; f1 = 28,000 MHz; f2 = 28,001 MHz OUTPUT POWER W 10 to 65 (P.E.P.) Gp dB typ. 18 dt(%) IC (A) d3(1) dB typ. -30 d5(1) dB < -30 IC(ZS) mA 50
BLW50F
Th C 25
AT 65 W P.E.P. typ. 45 typ. 1,45
handbook, full pagewidth
L4 C1 50 L1 C2 R1 T.U.T. L3 R2 L2 C4
C9 50 C7
temperature compensated bias (Ri < 0.1 )
+VCC C3 C5 C6 C8
MGP474
Fig.10 Test circuit; s.s.b. class-AB.
List of components: C1 C3 C4 C7 C8 C9 L1 L2 L3 L4 R1 R2 Note 1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB. = C2 = 10 to 780 pF film dielectric trimmer = C5 = C6 = 220 nF polyester capacitor = 120 pF ceramic capacitor (500 V) = 150 pF ceramic capacitor (500 V) = 47F/63 V electrolytic capacitor = 3,9 nF ceramic capacitor = 4 turns closely wound enamelled Cu wire (1,6 mm); int. dia 7,0 mm; leads 2 x 5 mm = Ferroxcube wide-band h.f. choke, grade 3B (cat.no. 4312 020 36640) = 9 turns enamelled Cu wire (1,0 mm); int. dia. 10 mm; length 14,5 mm; leads 2 x 5 mm = 6 turns enamelled Cu wire (1,0 mm); int. dia. 6,5 mm; length 11,0 mm; leads 2 x 5 mm = 2,4 ; parallel connection of 2 x 4,7 carbon resistors = 39 carbon resistor
August 1986
8
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW50F
handbook, halfpage
-20
MGP475
handbook, halfpage
50
MGP476
Gp
20 Gp (dB)
d3, d5 (dB)
dt (%)
dt -30 d3 25 10
d5 -40 0 0 25 50 P.E.P. (W) 75 0 25 50 P.E.P. (W) 0 75
VCE = 50 V; IC(ZS) = 50 mA; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 25 C; typical values.
VCE = 50 V; IC(ZS) = 50 mA; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 25 C; typical values.
Fig.11 Intermodulation distortion as a function of output power(1).
Fig.12 Double-tone efficiency and power gain as a function of output power.
Ruggedness in s.s.b. operation The BLW50F is capable of withstanding full load mismatch (VSWR = 50 through all phases) up to 45 W (P.E.P.) under the following conditions: VCE = 50 V; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 70 C; Rth mb-h = 0,3 K/W.
August 1986
9
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW50F
handbook, halfpage
30
MGP477
handbook, halfpage
20
MGP478
Gp (dB) 20
ri, xi () 10
ri 10 0 xi
0 1 10 f (MHz)
102
-10
1
10
f (MHz)
102
VCE = 50 V; IC(ZS) = 50 mA; PL = 60 W; Th = 25 C; ZL = 16 .
VCE = 50 V; IC(ZS) = 50 mA; PL = 60 W; Th = 25 C; ZL = 16 .
Fig.13 Power gain as a function of frequency.
Fig.14 Input impedance (series components) as a function of frequency.
Figs 13 and 14 are typical curves and hold for an unneutralized amplifier in s.s.b. class-AB operation.
August 1986
10
Philips Semiconductors
Product specification
HF/VHF power transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads
BLW50F
SOT123A
D
A F q U1 C B
w2 M C H L b c
4
3
A
p
U2
U3
1 2
H
w1 M A B
Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 7.47 6.37 0.294 0.251 b 5.82 5.56 c 0.18 0.10 D 9.73 9.47 D1 9.63 9.42 F 2.72 2.31 H 20.71 19.93 L 5.61 5.16 p 3.33 3.04 Q 4.63 4.11 q 18.42 U1 25.15 24.38 0.99 0.96 U2 6.61 6.09 0.26 0.24 U3 9.78 9.39 0.385 0.370 w1 0.51 0.02 w2 1.02 45 0.04
0.229 0.007 0.219 0.004
0.383 0.397 0.107 0.815 0.373 0.371 0.091 0.785
0.221 0.131 0.203 0.120
0.182 0.725 0.162
OUTLINE VERSION SOT123A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
August 1986
11
Philips Semiconductors
Product specification
HF/VHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLW50F
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
August 1986
12

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